8 August 2001 Silicon micromechanical sensors model of piezoresistivity
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Proceedings Volume 4516, Optoelectronic and Electronic Sensors IV; (2001) https://doi.org/10.1117/12.435901
Event: Optoelectronic and Electronic Sensors IV, 2000, Gliwice, Poland
Abstract
Application of the piezo resistivity model to estimate valence and conduction bands shifts induced by the mechanical stress is presented. Parameters of the silicon pressure and acceleration sensor, which are under development in the ITE, Warsaw, were used. Geometrical and technological data were used in calculations of the silicon energy band structure and longitudinal coefficient of the piezo resistivity.(pi) L.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan M. Lysko, Jan M. Lysko, } "Silicon micromechanical sensors model of piezoresistivity", Proc. SPIE 4516, Optoelectronic and Electronic Sensors IV, (8 August 2001); doi: 10.1117/12.435901; https://doi.org/10.1117/12.435901
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