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10 August 2001 Spectroellipsometric investigation of GaSb surfaces after their chemical wet etching
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Abstract
Procedure of chemical preparation of GaSb and particularly wet etching of GaSb surface is still optimized. Properties of surface layers depend on applied etchant. Spectroscopic ellipsometry (SE) is a very sensitive and allows estimation both thickness and layer stechiometry. Best process, which gives thinnest layer, can be determined directly from spectroscopic ellipsometry measurement. Optical properties of surface GaSb oxide often differ from described by Zolner. To determine thickness and refraction index of thin layers optical model of investigated structure is required. By comparing results of calculations for different models best one was found. Layers thicknesses and approximate refraction indices were determined for the surface layers after different etching.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Kudla and Ewa Papis-Polakowska "Spectroellipsometric investigation of GaSb surfaces after their chemical wet etching", Proc. SPIE 4517, Lightmetry: Metrology, Spectroscopy, and Testing Techniques Using Light, (10 August 2001); https://doi.org/10.1117/12.435964
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