Determination Of Indirect Conduction Band Minima In Semiconductors By Core-Level Reflectance Spectroscopy

S. M. Kelso; D. E. Aspnes; C. G. Olson; D. W. Lynch; K. J. Bachmann

doi:10.1117/12.939294

10 May 1984 Determination Of Indirect Conduction Band Minima In Semiconductors By Core-Level Reflectance Spectroscopy

S. M. Kelso, D. E. Aspnes, C. G. Olson, D. W. Lynch, K. J. Bachmann

Proceedings Volume 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I; (1984) https://doi.org/10.1117/12.939294
Event: 1983 Cambridge Symposium, 1983, Cambridge, United States

Abstract

We have studied transitions from shallow core levels to lower conduction band states in In1-xGaxAsyP1-y, In1-xGaxAs, and In1-xGaxSb using synchrotron radiation reflectance spectroscopy in the 17.5-21.5 eV photon energy range. Fits of third derivative lineshapes yield core-conduction energies modified by excitonic effects. The nonlinear variation of these energies is mostly determined by the L and X conduction band edges. From our data we obtain the following bowing parameters: CL = 0.10 ± 0.05 eV, Cx = 0.21 ± 0.07 eV for In1-xGaxAsyP1-y; CL = 0.4-0.7 eV, Cx = 0.08 ± 0.05 eV for In1-xGaxAs; and CL = 0.33 ± 0.05 eV, Cx = 0.13 ± 0.06 eV for In1-xGaxSb.

Citation Download Citation

S. M. Kelso, D. E. Aspnes, C. G. Olson, D. W. Lynch, and K. J. Bachmann "Determination Of Indirect Conduction Band Minima In Semiconductors By Core-Level Reflectance Spectroscopy", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); https://doi.org/10.1117/12.939294

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