Raman Scattering And Luminescence Study Of Laser Beam Induced Effects In GaAs-AlAs Multiple Quantum Well Structures

D. Kirillov; J. L. Merz

doi:10.1117/12.939285

10 May 1984 Raman Scattering And Luminescence Study Of Laser Beam Induced Effects In GaAs-AlAs Multiple Quantum Well Structures

D. Kirillov, J. L. Merz

Author Affiliations +

Proceedings Volume 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I; (1984) https://doi.org/10.1117/12.939285
Event: 1983 Cambridge Symposium, 1983, Cambridge, United States

Abstract

The effect of CW argon laser radiation on a GaAs-AlAs multiple quantum well structure was studied. Raman scattering and quantum well lumiunescence excited by the same laser beam were used as probes. It was found that most important changes in the spectra were caused by laser beam heating of the crystalline lattice. The temperature inside the laser beam was determined as a function of laser power, position in the laser spot and scanning speed. An irreversible transformation of the superlattice to a phase with different optical properties was observed at a laser power threshold of 24kW/cm2; this is much lower than the threshold for sample destruction. Temperature dependences of energies of quantum well transitions and LO GaAs-like phonons were also measured. Breit-Wigner-Fano interference between LO AlAs-like phonons and the Raman active continuum was found.

Citation Download Citation

D. Kirillov and J. L. Merz "Raman Scattering And Luminescence Study Of Laser Beam Induced Effects In GaAs-AlAs Multiple Quantum Well Structures", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); https://doi.org/10.1117/12.939285

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