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30 July 2001 Avalanche photodiodes: present and future
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Proceedings Volume 4532, Active and Passive Optical Components for WDM Communication; (2001) https://doi.org/10.1117/12.436007
Event: ITCom 2001: International Symposium on the Convergence of IT and Communications, 2001, Denver, CO, United States
Abstract
The state of the art InP/InGaAs avalanche photodiodes (APDs) and the R and D status of the novel APDs are reviewed. Highly sensitive and reliable 10 Gb/s photo receivers consisted of the conventional InP/InGaAs and InGaP/GaAs heterojunction bipolar transistor ICs are very practical and are now in volume production. The novel APDs reveal high performances such as high-speed and low-noise characteristics, indicating great potential for application to the ultra high-speed transmissions toward 40 Gb/s regime. Very recent study on the strain compensated multiple quantum well APDs aimed at L-band DWDM systems applications over 1.6micrometers wavelength is also introduced.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Mikawa, Masahiro Kobayashi, and Takao Kaneda "Avalanche photodiodes: present and future", Proc. SPIE 4532, Active and Passive Optical Components for WDM Communication, (30 July 2001); https://doi.org/10.1117/12.436007
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