30 July 2001 Dry-etching and nanofabrication technology perspective for novel optical devices/components
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Proceedings Volume 4532, Active and Passive Optical Components for WDM Communication; (2001) https://doi.org/10.1117/12.436023
Event: ITCom 2001: International Symposium on the Convergence of IT and Communications, 2001, Denver, CO, United States
This paper reviews III-V semiconductor dry etching technologies established in the past decade for miniaturizing and integrating photonic devices/components and nano-fabrication under development for creating novel photonic structures such as photonic crystal and quantum dots. After briefing the technology requirements for DWDM/OTDM-based Terabit optical communication era in 2005- 2010, advancement of the GaAs- and InP-based smooth and high-aspect-ration dry etching with micrometers -size is reviewed with some applications to dry-etched laser diodes and waveguide devices. Secondly, EB nano-lithography and dry etching technologies for 10- to 100-nm-size structures are reviewed for demonstrating photonic crystal. Challenging application to extremely miniaturized waveguide-based planar light wave circuits is included. Lastly, nano-probe assisted processing of arrayed quantum dots as a 10-nm-size structure is discussed. Achievement of suppressed size fluctuation using this technology will prov8de us with a possibility of large optical non-linearity promising for all-optical switching devices in the OTDM optical communication network system.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiyoshi Asakawa, Kiyoshi Asakawa, Yoshimasa Sugimoto, Yoshimasa Sugimoto, } "Dry-etching and nanofabrication technology perspective for novel optical devices/components", Proc. SPIE 4532, Active and Passive Optical Components for WDM Communication, (30 July 2001); doi: 10.1117/12.436023; https://doi.org/10.1117/12.436023

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