30 July 2001 Improved responsivity at the L-band wavelength of a strain-compensated InGaAs multiple quantum well photodiode
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Proceedings Volume 4532, Active and Passive Optical Components for WDM Communication; (2001) https://doi.org/10.1117/12.436008
Event: ITCom 2001: International Symposium on the Convergence of IT and Communications, 2001, Denver, CO, United States
Abstract
The absorption layer of a strain-compensated InGaAs multiple quantum well (MQW) was shown to improve the responsivity at the L-band wavelength of a photodiode used in optical fiber communications. The MQW was examined to clarify the range of structural parameters, which are strain and thickness, with which a smooth surface morphology can be obtained. A photodiode with an absorption region of a strain-compensated MQW exhibiting a smooth surface morphology was fabricated, and it was proven to have a high crystalline quality with a low dark current. The MQW absorption region enabled the responsivity of the photodiode to exceed that of a lattice- matched InGaAs photodiode. Carrier transport vertical to the MQW layer was shown to be scarcely affected by the hole trapping caused by band discontinuity.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toru Uchida, Toru Uchida, Atsushi Yazaki, Atsushi Yazaki, Chikashi Anayama, Chikashi Anayama, Akira Furuya, Akira Furuya, Tatsunori Shirai, Tatsunori Shirai, Masahiro Kobayashi, Masahiro Kobayashi, } "Improved responsivity at the L-band wavelength of a strain-compensated InGaAs multiple quantum well photodiode", Proc. SPIE 4532, Active and Passive Optical Components for WDM Communication, (30 July 2001); doi: 10.1117/12.436008; https://doi.org/10.1117/12.436008
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