Analysis of the modulation response of 1.3-um strained InAsP lasers

Ovidio Anton; Dinesh Patel; G. Vaschenko; Gary Y. Robinson; Jon Michael Pikal; Carmen S. Menoni

doi:10.1117/12.447767

8 November 2001 Analysis of the modulation response of 1.3-μm strained InAsP lasers

Ovidio Anton, Dinesh Patel, G. Vaschenko, Gary Y. Robinson, Jon Michael Pikal, Carmen S. Menoni

Proceedings Volume 4533, Semiconductor Lasers for Lightwave Communication Systems; (2001) https://doi.org/10.1117/12.447767
Event: ITCom 2001: International Symposium on the Convergence of IT and Communications, 2001, Denver, CO, United States

Abstract

In this paper we analyze the frequency response of 1.3+m highly strained InAsP/InGaAsP MQW lasers under small signal conditions. We show that in these lasers, electrical parasitics limit the high frequency response. These parasitics which are inherent to the laser structure, show an inductance-like behavior as determined from impedance measurements. We further show that the effect of the parasitic inductance in the laser modulation response can be significantly reduced by modifying the laser driving circuit.

Citation Download Citation

Ovidio Anton, Dinesh Patel, G. Vaschenko, Gary Y. Robinson, Jon Michael Pikal, and Carmen S. Menoni "Analysis of the modulation response of 1.3-μm strained InAsP lasers", Proc. SPIE 4533, Semiconductor Lasers for Lightwave Communication Systems, (8 November 2001); https://doi.org/10.1117/12.447767

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