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8 November 2001 Long-wavelength VCSELs with AlGaAsSb DBRs
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Proceedings Volume 4533, Semiconductor Lasers for Lightwave Communication Systems; (2001)
Event: ITCom 2001: International Symposium on the Convergence of IT and Communications, 2001, Denver, CO, United States
We review the design, fabrication and characterization of 1.55micrometers , lattice-matched vertical-cavity surface-emitting lasers with AlAsSb/AlGaAsSb mirrors. The Sb-based mirrors provide both high reflectivity and an InP-lattice-matched structure. They lead to electrically pumped, pulsed operation of the lasers, but poor thermal conductivities of these ternary and quaternary materials and large voltage drop across them prevent the lasers from operating continuous-wave. A double-intracavity contacted structure along with thick, n-type InP cladding layers circumvents these drawbacks and finally leads to an excellent performance. For one embodiment, the threshold current is 800 (mu) A, the differential quantum efficiency is 23%, and the maximum output power is more than 1 mW at 20 degree(s)C and 110 (mu) W at 80 degree(s)C.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeru Nakagawa, Eric M. Hall, and Larry A. Coldren "Long-wavelength VCSELs with AlGaAsSb DBRs", Proc. SPIE 4533, Semiconductor Lasers for Lightwave Communication Systems, (8 November 2001);

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