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8 November 2001 Characterization of a monolithic silicon MEMS technology in standard CMOS process
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Proceedings Volume 4534, Optoelectronic and Wireless Data Management, Processing, Storage, and Retrieval; (2001) https://doi.org/10.1117/12.448003
Event: ITCom 2001: International Symposium on the Convergence of IT and Communications, 2001, Denver, CO, United States
Abstract
This paper presents a comparative analysis between two specific post-processing techniques (RIE dry etching and TMAH wet etching) that are suitable for implementing a monolithic CMOS compatible MEMS fabrication technology. Further, an experimental investigation is presented which details the fabrication of MEMS structures by TMAH post etching of a CMOS chip fabricated in a standard AMI 1.5 micrometers CMOS process. Finally this paper provides future designers with experimental data that will allow for the design and fabrication of simple MEMS structures using a standard CMOS process.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kuntao Ye and Fred Richard Beyette Jr. "Characterization of a monolithic silicon MEMS technology in standard CMOS process", Proc. SPIE 4534, Optoelectronic and Wireless Data Management, Processing, Storage, and Retrieval, (8 November 2001); https://doi.org/10.1117/12.448003
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