Paper
29 May 2002 Residual stress and fracture toughness in Pb(Zr0.58Ti0.42)O3 piezoelectric thin film
Y. C. Zhou, X. J. Zheng
Author Affiliations +
Proceedings Volume 4537, Third International Conference on Experimental Mechanics; (2002) https://doi.org/10.1117/12.468802
Event: Third International Conference on Experimental Mechanics, 2002, Beijing, China
Abstract
Piezoelectric thin films with x equals 0.58 were deposited on Pt/Ti/Si by pulsed laser deposition (PLD). In the paper, the indentation fracture method was first used to determine the residual stress and fracture toughness of PZT thin film. In the determination of residual stress by indentation fracture method, two models including GLFW model and ZCF model were adopted. The fracture pattern diagram as a function of indentation load and thin film thickness was introduced. Radial and lateral cracks were observed in indentation with a Vickers diamond indenter. The experimental results show that the residual stress values measured by ZCF model were closer to the results measured by x- ray diffraction and the interface fracture toughness was much lower than the surface fracture toughness of PZT thin film.
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Y. C. Zhou and X. J. Zheng "Residual stress and fracture toughness in Pb(Zr0.58Ti0.42)O3 piezoelectric thin film", Proc. SPIE 4537, Third International Conference on Experimental Mechanics, (29 May 2002); https://doi.org/10.1117/12.468802
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KEYWORDS
Thin films

Ferroelectric materials

Interfaces

Mechanics

Diamond

Chromium

Pulsed laser deposition

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