Ultra-thin silicon-on-sapphire (UTSi) CMOS technology is a commercial, high yield silicon-on-sapphire technology that yields circuitry well suited for optical communication functions on a transparent substrate. This characteristic, unique to the silicon-on-sapphire configuration, allows flip-chip bonding of optoelectronic (OE) devices onto CMOS circuitry to build Flipped Optoelectronic Chip on UTSi (FOCUTS) optical transmit and receive modules. Flip-chip bonding eliminates the wire-bond inductance between driving/receiving circuits and the OE devices which becomes problematic at data rates greater than about 2.5 Gbps. Such flip-chip integration also reduces the number of discrete components that must be handled, packaged, and aligned in a module, thereby improving reliability and reducing costs. Additional functions, such as Electrically Erasable Programmable Read Only Memory (EEPROM) and self aligned Automatic Power Control (APC) photodetectors and control circuits will be discussed. We describe measured results of flip-chip bonding of arrayed OE devices (VCSELs and photodetectors) and test results at 3 Gbps as well as recent integrating and testing of phototransistors in UTSi circuits. We also describe the radiation sensitivity of all components and applicability of this technique to remote sensing applications. These devices, operating at 850 nm, are aimed at multimode, short reach optical fiber networks.