28 September 2001 Gold damascene interconnect technology for millimeter-wave photonics on silicon
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Proceedings Volume 4557, Micromachining and Microfabrication Process Technology VII; (2001) https://doi.org/10.1117/12.442947
Event: Micromachining and Microfabrication, 2001, San Francisco, CA, United States
Abstract
Thick-gold-multilevel damascene-interconnect technology makes it possible to fabricate >10-micrometers -feature ultrahigh-speed devices on Si. Adding H2O2 to a conventional KIO3-based slurry triples the removal rate of gold in chemical mechanical polishing (CMP). A ratio of H2O2 to slurry of approximately 1:1 is found to be the optimum for obtaining the highest gold removal rate. X-ray photoelectron spectroscopy (XPS) analyses show that gold is oxidized in spite of its chemical stability when the removal rate is high. The gold is oxidized due to the reduction of iodine at the optimum H2O2 mixture ratio. This CMP of gold enabled us to make a thick (>10 micrometers ) gold-multilevel damascene-interconnection structure for the first time. Integration of full-wafer wafer-bonded uni-traveling carrier photodiodes (UTC-PDs) with the gold multilevel interconnections as coplanar waveguides (CPWs) on a Si wafer has been achieved using this gold-CMP process.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiromu Ishii, Hiromu Ishii, Shouji Yagi, Shouji Yagi, Tadashi Minotani, Tadashi Minotani, Yakov Royter, Yakov Royter, Kazuhisa Kudou, Kazuhisa Kudou, Masaki Yano, Masaki Yano, Tadao Nagatsuma, Tadao Nagatsuma, Katsuyuki Machida, Katsuyuki Machida, Hakaru Kyuragi, Hakaru Kyuragi, } "Gold damascene interconnect technology for millimeter-wave photonics on silicon", Proc. SPIE 4557, Micromachining and Microfabrication Process Technology VII, (28 September 2001); doi: 10.1117/12.442947; https://doi.org/10.1117/12.442947
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