28 September 2001 Method of bond strength evaluation for silicon direct wafer bonding
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Proceedings Volume 4557, Micromachining and Microfabrication Process Technology VII; (2001) https://doi.org/10.1117/12.442939
Event: Micromachining and Microfabrication, 2001, San Francisco, CA, United States
Abstract
A crack-opening method used for characterization of silicon direct wafer bonding (DWB) techniques was analyzed. Mathematical model describing the influence of the pattern shape on the wafer pair resistance curve, so-called the R-curve, was developed. Two-dimensional patterns were created on a mirror-polished silicon wafer surface by a combination of photolithography, deposition and etching steps. Experimental observations did show that structured wafers can be used for large bond energy measurements. We propose utilization of structured wafers for bond energy measurements. It allows R-curve shape manipulation, increases the method sensitivity, and reduces probability of wafer failure. The resulting theory can also be used for developing new experimental methods for large bond energy measurements.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander Spivak, Avag Avagyan, Brady R. Davies, "Method of bond strength evaluation for silicon direct wafer bonding", Proc. SPIE 4557, Micromachining and Microfabrication Process Technology VII, (28 September 2001); doi: 10.1117/12.442939; https://doi.org/10.1117/12.442939
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