28 September 2001 Novel process for high reflectivity of Al sidewalls of optical mirrors using KrF excimer laser annealing
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Proceedings Volume 4557, Micromachining and Microfabrication Process Technology VII; (2001) https://doi.org/10.1117/12.442933
Event: Micromachining and Microfabrication, 2001, San Francisco, CA, United States
Abstract
A study of the laser annealing effect for the thermal evaporated Al thin film onto micromirrors of optical switch and (100) Si subtrates is reported. The 2 X 2 optical switches has been fabricated through DRIE process. The input laser energy has been changed from 150 mJ/pulse to 350 mJ/pulse and the number of pulse also changed. The surface morphology is investigated by SEM micrograph and the roughness is examined by AFM. The reflectivities of the samples are measured by IR reflectometer and the results are normalized with gold. In case of the energy above 200 mJ/pulse, the reflectivities are improved up to above 0.98 from the incident beam region of 1300 nm to 1550 nm. The improvement of reflectivity is caused by the reflow process induced laser annealing. By the reflow process the grain have been growth and agglomerated for the surface planarization. The energy for planarization is sufficient as 1 pulse incident laser beam. According to the number of pulses, reflectivity is somewhat degraded by excess heat of reflow in case of above 5 pulses. There is minor morphology change with input laser energy.
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Moon-Youn Jung, Moon-Youn Jung, Hojun Ryu, Hojun Ryu, Myung-Lae Lee, Myung-Lae Lee, Chi-Hoon Jun, Chi-Hoon Jun, Youn Tae Kim, Youn Tae Kim, } "Novel process for high reflectivity of Al sidewalls of optical mirrors using KrF excimer laser annealing", Proc. SPIE 4557, Micromachining and Microfabrication Process Technology VII, (28 September 2001); doi: 10.1117/12.442933; https://doi.org/10.1117/12.442933
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