Method for testing electrostatic discharge tolerance for fingerprint sensor LSI

Yasuyuki Tanabe; Hideyuki Unno; Katsuyuki Machida; Norio Sato; Hiromu Ishii; Satoshi Shigematsu; Hiroki Morimura; Hakaru Kyuragi

doi:10.1117/12.442989

2 October 2001 Method for testing electrostatic discharge tolerance for fingerprint sensor LSI

Yasuyuki Tanabe, Hideyuki Unno, Katsuyuki Machida, Norio Sato, Hiromu Ishii, Satoshi Shigematsu, Hiroki Morimura, Hakaru Kyuragi

Author Affiliations +

Proceedings Volume 4558, Reliability, Testing, and Characterization of MEMS/MOEMS; (2001) https://doi.org/10.1117/12.442989
Event: Micromachining and Microfabrication, 2001, San Francisco, CA, United States

Abstract

The measurement of electrostatic discharge (ESD) tolerance for a capacitive fingerprint sensor LSI in which the sensor is stacked on a 0.5-micrometers CMOS LSI is described. To compare the contact discharge method and air discharge method, we investigated the dependence of the ESD failure voltage on the distance between the sensor surface and ESD electrode for a conventional planar-type fingerprint sensor LSI. The ESD failure voltage decreased as the electrode approached to sensor surface and reached its lowest value when the electrode touched the surface. Therefore, we conclude that the contact discharge method is more suitable for evaluating ESD tolerance for fingerprint sensor LSI because the measurement condition is clearly defined and ESD failure value is the most critical. Moreover, we revealed that our proposed sensor LSI with the grounded wall (GND wall) has high ESD tolerance of over +/- 8.0 kV by the contact discharge method.

Citation Download Citation

Yasuyuki Tanabe, Hideyuki Unno, Katsuyuki Machida, Norio Sato, Hiromu Ishii, Satoshi Shigematsu, Hiroki Morimura, and Hakaru Kyuragi "Method for testing electrostatic discharge tolerance for fingerprint sensor LSI", Proc. SPIE 4558, Reliability, Testing, and Characterization of MEMS/MOEMS, (2 October 2001); https://doi.org/10.1117/12.442989

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