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11 March 2002 100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology
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The complexity of photomasks is rapidly increasing as semiconductor devices are scaled down and optical proximity correction (OPC) becomes commonplace. Raster scan architectures are well suited to the challenge of maintaining mask throughput despite these trends. Electron-beam techniques have the resolution to support OPC requirements into the foreseeable future. The MEBES® eXara mask pattern generator combines the resolution of a finely focused electron probe with the productivity and accuracy of Raster Graybeam patterning. Features below 100nm can be created, and OPC designs are produced with consistent fidelity. Write time is independent of resist sensitivity, allowing high-dose processes to be extended, and relaxing sensitivity constraints on advanced chemically amplified resists. The system is designed for the production of 100nm photomasks, and will support the development of 70nm masks.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank E. Abboud, Ki-Ho Baik, Varoujan Chakarian, Damon M. Cole, Jay P. Daniel, Robert L. Dean, Mark A. Gesley, Robert J. Naber, Thomas H. Newman, Frederick Raymond III, David Trost, Mark Wiltse, and William DeVore "100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002);


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