11 March 2002 2001 update on the SEMI Standards Mask Qualification Terminology Task Force
Author Affiliations +
At BACUS2000 this initiative towards a common use of terminology in photomask manufacturing and application, has been introduced. A proposed standard has been achieved for one-dimensional terminology, such as feature width uniformity, feature linearity, etc. The special approach of the document is that it includes a list of mandatory information to clarify a number given, e.g. as measurement result or as budget. The main target of the document is to serve as guideline for user-supplier communication in the field of photomasks. The present focus in the Task Force is on terminology for two-dimensional mask metrology. This includes corner rounding, line-end, shortening, edge roughness, etc. Such terms are already in use and described in literature, but a quantitative comparison is complicated without a full understanding of the technique and sample size used. In addition, the Task Force is discussing an approach by which the fidelity of a mask feature can be quantified. The challenge for use in benchmarking is to find a representative set of features. The suggested pattern fidelity quantification is a first step to allow an assessment of the printing performance of real reticles, taking limitations of the achieved pattern fidelity caused by the mask making process into account.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rik M. Jonckheere, Rik M. Jonckheere, "2001 update on the SEMI Standards Mask Qualification Terminology Task Force", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458299; https://doi.org/10.1117/12.458299


Mask technology for 0.18-um device generation
Proceedings of SPIE (July 23 1996)
History and future of mask making
Proceedings of SPIE (December 26 1996)
New-concept i-line stepper for mask fabrication
Proceedings of SPIE (July 18 2000)
Reticle quality needs for advanced 193-nm lithography
Proceedings of SPIE (September 04 2001)

Back to Top