11 March 2002 Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation
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Abstract
In this paper we focus on a laser/dry etch mask process simulation. Using Mentor Graphics Calibre RET tool suite, we exploit the similarity between the image on laser based mask writers and the image on wafer steppers. Doing so, we adapt a 'Silicon process simulation' to a 'mask process simulation'. The mask process tuning is performed with Mentor test patterns and then we simulate the mask image of a 4x scale database. The result is saved as a 1x scale gds file and is used, in a normal way, for a 193nm lithography simulation. We notice a large difference between the aerial image of the 193nm lithography based on the database and the one based on the mask process simulation.
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Alexandra Barberet, Alexandra Barberet, Gilles L. Fanget, Gilles L. Fanget, Peter D. Buck, Peter D. Buck, Olivier Toublan, Olivier Toublan, Jean-Charles Richoilley, Jean-Charles Richoilley, Michel Tissier, Michel Tissier, } "Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458328; https://doi.org/10.1117/12.458328
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