11 March 2002 Analysis of dry etch loading effect in mask fabrication
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Abstract
As the design rule is rapidly decreased, tighter critical dimension (CD) control is highly requested. Considering the mask error enchantment factor, higher mask quality below 8nm should be guaranteed for 0.10micrometers generation devices. Among a number of actors causing CD errors in e-beam mask fabrication, dry etching plays an important role. Therefore, it is necessary to reduce loading effect for accurate CD control. As the loading effect in the dry etching is closely related to the selectivity of Cr to resist, a clue to reduce the loading effect is to reduce loading. In this paper, we will clarify the relation mechanism between the selectivity and loading effect. We will investigate the degree of loading effect by quantifying the selectivity with different etch processes.
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Jeong-Yun Lee, Jeong-Yun Lee, Sung-Yong Cho, Sung-Yong Cho, Chang-Hwan Kim, Chang-Hwan Kim, Sung-Woo Lee, Sung-Woo Lee, Seong-Woon Choi, Seong-Woon Choi, Woo-Sung Han, Woo-Sung Han, Jung-Min Sohn, Jung-Min Sohn, } "Analysis of dry etch loading effect in mask fabrication", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458341; https://doi.org/10.1117/12.458341
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