11 March 2002 Binary mask defect printability for 130-nm ArF lithography
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Abstract
Recent observations indicate that wafer CD control for the 0.13-micrometers node is sensitive to non-phase defects between 0.1 micrometers and 0.25 micrometers on a 4X reticle, as a function of the location of the sub-killer defect. Since more and more small defects can be detected by today's advanced mask defect inspection tools, it is important to determine whether these detected defects can impact wafer lithography process window. The experimental result is based on a typical 0.13-micrometers process using a pre-designed Defects Sensitivity Monitor reticle to address the printability of these programmed defects.
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Shu-Chun Lin, Shu-Chun Lin, Jian-Hong Chen, Jian-Hong Chen, Tyng-Hao Hsu, Tyng-Hao Hsu, C. C. Hung, C. C. Hung, Chin-Hsiang Lin, Chin-Hsiang Lin, } "Binary mask defect printability for 130-nm ArF lithography", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458363; https://doi.org/10.1117/12.458363
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