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11 March 2002 Characterization of quartz-etched PSM masks for KrF lithography at the 100-nm node
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The application of strong phase shift masks (PSM's) such as AAPSM and Chromeless using KrF 248-nm lithography is increasingly in demand for production of advanced devices at the 130 nm node and below. Implementation of dual exposure PSM technology is becoming widely accepted as a method to achieve sub-wavelength gate and contact layer resolution for microprocessors, DRAM and thin film heads. This requires a stable and repeatable phase-shift mask process that will perform for the wafer lithographer and is manufacturable using today's leading edge photomask fabrication methods. The focus of this study is the characterization of the photomask quartz etch process. The effect of the photomask's phase depth control and the quartz etch CD control will be examined. A comprehensive mask metrology study will be supplemented by lithography process latitude data, both simulation and experimentally based. The effect of fabricating the photomask quartz trenches using either resist or chrome defined etch masks will also be studied as well as the impact on lithography process latitude. A key goal of this study is the determination of a realistic specification for the quartz etch process required for leading- edge phase-shift photomasks.
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Peter D. Rhyins, Michael Fritze, David Y. Chan, Chris Carney, B. A. Blachowicz, Marco Vieira, and Chris A. Mack "Characterization of quartz-etched PSM masks for KrF lithography at the 100-nm node", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002);


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