11 March 2002 Comparison of contact hole definition using laser and shaped e-beam mask writers and its influence on wafer level pattern fidelity
Author Affiliations +
Abstract
Contact hole definition in the resist image is investigated as a function of reticle fidelity. It is found that for typical levels of corner rounding on reticle features, whether manufactured using a laser or shaped e-beam mask writer, the printed resist image at wafer level is largely unaffected. The loss of definition, which is also seen in supporting simulations using perfectly formed reticle features, is defined by the resolution limit of the resolution limit of the optical system of the stepper rather than the quality of the photomask.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian Martin, Robert Lloyd, Gareth Davies, Graham G. Arthur, "Comparison of contact hole definition using laser and shaped e-beam mask writers and its influence on wafer level pattern fidelity", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458330; https://doi.org/10.1117/12.458330
PROCEEDINGS
7 PAGES


SHARE
Back to Top