11 March 2002 Defect printability analysis of attenuated PSM using PASStm
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130nm design rule and 100nm design rule device fabrication bring a whole new challenge to the mask makers. The critically small k1 value and correspondingly large MEEF (Mask Error Enhancement Factor) value impose an ever-higher quality requirement on the reticles. The higher emphasis on time-to-market of the semiconductor business environment only complicates the matter further. Mask makers are not only required to supply higher quality reticles, but also in a shorter period of time. Since its introduction, the concept of simulating the stepper/scanner by software has steadily gained popularity as the potential solution to meet the challenge. The experimental result of the previous version of PASS (Printability Analysis Stepper Simulator) with the binary mask had shown promising results. However, people are expecting Attenuated Phase Shifting Mask (AttPSM) simulation capability, since AttPSM is currently the most commonly used reticles for the critical layers-the place where PASS is needed the most. PASS V2.X extends its stepper simulation capability to AttPSM. We have prepared AttPSM test masks having programmed for 180nm and 130nm design rules. Each defect area was inspected with KLA-Tencor's 365UV-HR inspection system to acquire defect coordinates and images, simulated with PASS using the images, simulated with AIMS and finally printed on wafer. In this study we discuss the results and see how these simulations and images correlate with each other.
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Yumiko Maenaka, Yumiko Maenaka, Norihiko Takatsu, Norihiko Takatsu, Ichiro Kagami, Ichiro Kagami, Daichi Kakuta, Daichi Kakuta, } "Defect printability analysis of attenuated PSM using PASStm", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458322; https://doi.org/10.1117/12.458322


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