11 March 2002 Extended capability of laser writer for masks beyond 180-nm nodes
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The demands for shrinking critical dimension (CD) and for tight control of CD uniformity on photomask are rapidly increasing. To keep pace with the demands, optical pattern generators using i-line resist is expanding its capability by continuously modifying hardware and writing strategies. Aside from their advantage of high throughput and layer-to- layer alignability for phase-shifting masks (PSM), this optical process has proven to show a good capability in view of the mean-to-target (MTT) control. In this paper, we investigate the extended capability of a laser writing tool for 180nm node and below in view of process-induced limitations and systematic errors. We also discuss the effects of pattern density and of writing strategy on Cd accuracy and pattern placement error. Since MTT and CD uniformity error for 180 nm generation device are critical for wafer printing, we scrutinize process-induced limitations and systematic errors. The process-induced limitations, related to pattern density and shape, are discussed along with the football effect and iso-dense bias.
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Sung-Yong Cho, Sung-Yong Cho, Jeong-Yun Lee, Jeong-Yun Lee, Chang-Hwan Kim, Chang-Hwan Kim, Seong-Woon Choi, Seong-Woon Choi, Woo-Sung Han, Woo-Sung Han, Jung-Min Sohn, Jung-Min Sohn, } "Extended capability of laser writer for masks beyond 180-nm nodes", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458290; https://doi.org/10.1117/12.458290

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