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11 March 2002 Loading effect parameters of dry etcher system and their analysis in mask-to-mask loading and within-mask loading
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The Cr etch rate is affected by Cr density to be etched at the photomask. Different mask-to-mask and within-mask pattern densities have made difficult to control the final CD. We have tested loading effect using binary Cr mask with ZEP7000 photoresist. The loading effect was evaluated for the masks fabricated at the various dry etch conditions with different within-mask Cr loading. The Cr etch rate and selectivity was observed at various process conditions and relations between parameters of dry etch process and Cr loading were evaluated. The horizontal and the vertical Cr etch rates were investigated and the process parameter dependence on the Cr loading was analyzed. The horizontal and the vertical photoresist etch rates were evaluated for the photoresist loading effect. The cause of mask-to-mask loading and within-mask loading are mainly from Cr loading and photoresists loading, respectively. The Cr loading is mainly affected by source power, pressure, and Cl2/O2 ratio. In our system, within-mask Cr loading is strongly dependent on the process parameters when the selectivity of Cr to PR is below 1. If uniformity and selectivity are acceptable, high DC bias, high ga flow, low pressure, and high Cl2/O2 ratio are recommended to reduce loading effect.
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Hyuk-Joo Kwon, Dong-Soo Min, Pil-Jin Jang, Byung-Soo Chang, Boo-Yeon Choi, and Soo-Hong Jeong "Loading effect parameters of dry etcher system and their analysis in mask-to-mask loading and within-mask loading", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002);


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