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11 March 2002 New generation photomasks: 193-nm defect printability study
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Abstract
Today some IC manufacturers obtain finer circuit geometries by adding scatter bars (SB) to conventional binary masks as an efficient resolution enhancement technique (RET).1 These SB perform best when they are wide. However, to achieve better resolution and wider process windows modern stepper equipments feature lower wavelengths and higher numerical aperture lenses. These new steppers require narrower scatter bars to prevent them from printing on the wafer, and their effectiveness as a RET is diminishing as we follow the stepper technology 'roadmap'.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Linard Karklin, Paul van Adrichem, Frank A.J.M. Driessen, and Stan Mazor "New generation photomasks: 193-nm defect printability study", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458315
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