Translator Disclaimer
Paper
11 March 2002 Optical performances under the conditions of various geometrical structures and phase defects in phase edge PSM
Author Affiliations +
Abstract
As high-speed non-memory devices require narrow gate widths of less than 100 nm, the technology for this requirement shou7ld be guaranteed. In view of microlithography, one candidate to support such a narrow gate width is a phase edge (PE) PSM technique. However, because this PEPSM technique has not yet been thoroughly developed in the viewpoint of mask making, an activity to find optimal mask parameters for best optical performances should be made. In this paper, optical performances of PEPSM have been described under various geometrical structures and phase defects as mask parameters. Optical performances of PEPSM were strongly dependent on the pattern pitch, the optimal phase, and the mask structure. From our studies, the optimal phase of shifter was considered to be 179 degrees and the optimal mask structure expressed in dry/wet etch ratio was 50/130 degrees when considering the overall pitch. The phase defect having its phase of less than 50 percent did not seriously affect the lithography patterning. We could easily make PEPSMs having maximum phase defects of 50 degrees with our hybrid etch process. Finally, we could build the manufacturing process of PEPSM for sub-100 nm resist CD patterning.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tae Moon Jeong, In-Gyun Shin, Dong-Hoon Chung, Sung-Hyuck Kim, Hyoungdo Kim, Seong-Woon Choi, Woo-Sung Han, and Jung-Min Sohn "Optical performances under the conditions of various geometrical structures and phase defects in phase edge PSM", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458361
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top