11 March 2002 Technologies for electron-beam reticle writing systems for 130-nm node and below
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Abstract
A new advanced e-beam reticle writing system HL-950M has been developed to meet requirements for the production of 130 nm node reticles as well as the development of 100 nm node reticles. In order to improve the critical dimension (CD) accuracy and pattern positioning accuracy, several new technologies have been introduced. Fine address size is realized by a newly developed control electronics that enables the system to handle address unit of 2.5 nm, providing four times higher resolution than that of the previous systems. Reconstruction of sub-sub-field (SSF) pattern data has been developed so that the same pattern is exposed twice with reconstructed SSF pattern data sets with different SSF boundaries, realizing better stitching and positioning accuracy. High accuracy proximity effect correction has been developed with a new second order proximity effect calculation scheme, particularly promising better CD linearity. As main results of the system evaluation, the global CD accuracy of 9 nm and the global pattern positioning accuracy of 15 nm have been obtained. The overall performance of the HL-950M system has satisfied the specifications required for the 130 nm node reticle production and 100nm node reticle development.
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Genya Matsuoka, Hidetoshi Satoh, Akira Fujii, Kazui Mizuno, Tetsuji Nakahara, Suyo Asai, Yasuhiro Kadowaki, Hajime Shimada, Hiroshi Touda, Ken Iizumi, Hiroyuki Takahashi, Kazuyoshi Oonuki, Toshikazu Kawahara, Katsuhiro Kawasaki, Koji Nagata, "Technologies for electron-beam reticle writing systems for 130-nm node and below", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458323; https://doi.org/10.1117/12.458323
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