4 October 2001 Electric field detector using electro-optic device
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Proceedings Volume 4564, Optomechatronic Systems II; (2001) https://doi.org/10.1117/12.444101
Event: Intelligent Systems and Advanced Manufacturing, 2001, Boston, MA, United States
Abstract
The fabrication of an electric field detector using electro- optic LiNbO3 (LN) single crystal has been studied for the application to check the electric field of a conductively patterned panel. When this electric field detector moves on the surface of the panel, air gap which is close enough for the given field intensity and resolution has to be maintained constantly not to damage the patterns on the surface For the effective detection of electric field change in this air gap state, LN single crystal was selected because of the relatively high electro-optic coefficient, transmittance and low dielectric constant. X-cut LN and Z- cut LN structures were selected to estimate the applicability of LN single crystal by the simulation on the optical intensity variation and electric field distribution of the various structures. As the air gap was increased from 0 to 40 (μm) in the X-cut LN structure, half-wave voltage (Vπ) was increased from 400 to 700 (V) and optical intensity variation with unit voltage (Q) was decreased from 1.3 to 0.17. At the air gap of 10 μm in the Z-cut LN structure, (Vπ) was about 100-150 (V) and Q was 6.7 (%/V) much larger than that of the X-cut LN structure. Form these characteristics, Z-cut LN structure proved to be applicable for the electric field detector because the optical intensity variation (.08μW) was sufficient in the ac driving voltage region (±20 V) of the real system.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Changho Lee, Changho Lee, Yongbae Jeon, Yongbae Jeon, DaeHwa Jeong, DaeHwa Jeong, Ick-June Yune, Ick-June Yune, Kwangsoo No, Kwangsoo No, "Electric field detector using electro-optic device", Proc. SPIE 4564, Optomechatronic Systems II, (4 October 2001); doi: 10.1117/12.444101; https://doi.org/10.1117/12.444101
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