22 February 2002 Enhancement in ZnS:Mn triboluminescent film intensity using ZnO films as buffer layers
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Proceedings Volume 4576, Advanced Environmental Sensing Technology II; (2002) https://doi.org/10.1117/12.456955
Event: Environmental and Industrial Sensing, 2001, Boston, MA, United States
Abstract
We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using RF magnetron sputtering method and annealing technique. Highly oriented film of ZnO was firstly deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the ZnO film with orientation. By annealing at 5% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was increased. It was found that the addition of the ZnO buffer layer greatly improve the TrL intensity of the ZnS:Mn films.
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Boateng Onwoma-Agyemann, Boateng Onwoma-Agyemann, Chao-Nan Xu, Chao-Nan Xu, S.W. Shi, S.W. Shi, Xu-Guang Zheng, Xu-Guang Zheng, Morio Suzuki, Morio Suzuki, } "Enhancement in ZnS:Mn triboluminescent film intensity using ZnO films as buffer layers", Proc. SPIE 4576, Advanced Environmental Sensing Technology II, (22 February 2002); doi: 10.1117/12.456955; https://doi.org/10.1117/12.456955
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