Photodamage of Zn:In:LiNbO3 crystal waveguide substrate

Rui Wang; Xinrong Liu; Wusheng Xu; Biao Wang

doi:10.1117/12.444911

19 October 2001 Photodamage of Zn:In:LiNbO₃ crystal waveguide substrate

Rui Wang, Xinrong Liu, Wusheng Xu, Biao Wang

Proceedings Volume 4579, Optical Fiber and Planar Waveguide Technology; (2001) https://doi.org/10.1117/12.444911
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

In this research, Czochralski method was used to grow Zn:In:LiNbO₃ crystal. The lattice constants, ultra- visible absorption spectra, infrared absorption spectra and photodamage resistance ability of the crystal were measured. The photodamage threshold of LiNbO₃ and Zn:In:LiNbO₃ crystal waveguide substrate were investigated by the m-line method. It is found that the higher the concentrations of In and Zn were doped, the more the absorption band of crystal was shifted to short wave. The OH absorption peak of Zn(3mo1%):In(2mo1%):LiNbO₃ and Zn(3mo1%):In(1mo1%):LiNbO₃ crystal was located at about 3484 cm^-1, and that of Zn(3mo1%):In(3mo1%):LiNbO₃ crystal was located at about 3515 cm^-1. The photodamage resistance ability of Zn(3mo1%):In(2mo1%):LiNbO₃ crystal was two orders of magnitude higher than that of LiNbO₃ crystal. The photodamage threshold of LiNbO₃ crystal waveguide substrate and Zn:In:LiNbO₃ crystal waveguide substrate were 5x10³J/cm² and 1x10⁶J/cm², respectively.

Citation Download Citation

Rui Wang, Xinrong Liu, Wusheng Xu, and Biao Wang "Photodamage of Zn:In:LiNbO₃ crystal waveguide substrate", Proc. SPIE 4579, Optical Fiber and Planar Waveguide Technology, (19 October 2001); https://doi.org/10.1117/12.444911

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