1.3 um GaInNAs/GaAs quantum well lasers and photodetectors

Zhong Pan; Yaowang Lin; Lianhe Li; Yinqiang Xu; Wei Zhang; Rong Han Wu

doi:10.1117/12.444943

19 October 2001 1.3-μm GaInNAs/GaAs quantum well lasers and photodetectors

Zhong Pan, Yaowang Lin, Lianhe Li, Yinqiang Xu, Wei Zhang, Rong Han Wu

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444943
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

The growth of GaInNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6% in GaInNAs/GaAs QW was obtained, corresponding to the photoluminescence peak wavelength of 1.57 (m at 10K. The nitrogen incorporation behavior in MBE growth and the quality improvement of the QW have been studied in detail. 1.3 (m GaInNAs/GaAs SQW laser and MQW resonant-cavity enhanced photodetector have been achieved.

Citation Download Citation

Zhong Pan, Yaowang Lin, Lianhe Li, Yinqiang Xu, Wei Zhang, and Rong Han Wu "1.3-μm GaInNAs/GaAs quantum well lasers and photodetectors", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444943

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