980-nm high-power semiconductor lasers

Xin Gao; Yi Qu; Hui Li; Baoxue Bo

doi:10.1117/12.445006

19 October 2001 980-nm high-power semiconductor lasers

Xin Gao, Yi Qu, Hui Li, Baoxue Bo

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.445006
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

In this paper we report a 980 nm InGaAs/GaAs MQW semiconductor laser array. The epilayer structures are grown by MBE. We have fabricated broad areas lasers with a cavity length of 1000micron and a stripe width of 6micron and a stripe spacing of 100micron. The measurements are performed in quasi-continuous wave mode (QCW). The highest QCW output power of 12W for laser array with coated facets is achieved. The threshold current density is 400 A/cm2 at 15degree. The slope efficiency is 0.74W/A. The lasing spectrum is peaked at 979.4 nm with a FWHM of 3nm.

Citation Download Citation

Xin Gao, Yi Qu, Hui Li, and Baoxue Bo "980-nm high-power semiconductor lasers", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.445006

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