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19 October 2001 Band lineup calculations for strained InGaAs(P)/InP quantum well structures
Dejun Han, Chao Liu, K. T. Chan
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.445001
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
We use empirical equations verified indirectly by experimental results in first priority to calculate band lineup and other parameters related to optical gain calculations for strained InGaAsP/InP quantum well (QW) structures, the parameters without such known empirical equations are calculated by interpolation scheme from binary or ternary compound that consists the quaternary alloys. This approach may sacrifice the systematical feature but the results are more accurate.
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Dejun Han, Chao Liu, and K. T. Chan "Band lineup calculations for strained InGaAs(P)/InP quantum well structures", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.445001
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KEYWORDS
Quantum wells
Gallium
Polarization
Binary data
Data communications
Indium gallium arsenide
Laser amplifiers
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