19 October 2001 Dependence of threshold current density on the stacked quantum dot layers
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.445005
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
Lasers based on InGaAs/(Ga,Al)As stacked QDs layers are fabricated. The performance of the quantum dots laser is dependent on the detailed design of the active region. The threshold current density is greatly decreased by the use of multiple-layer quantum dots, coupled dots layers, or barriers with wide band gap. An average threshold current density of about 20A/cm2 is achieved for the laser with the width of 15micron.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongqiang Ning, Yongqiang Ning, Xin Gao, Xin Gao, Yun Liu, Yun Liu, Lijun Wang, Lijun Wang, Peter M. Smowton, Peter M. Smowton, Peter Blood, Peter Blood, } "Dependence of threshold current density on the stacked quantum dot layers", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.445005; https://doi.org/10.1117/12.445005
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