Efficient passivation and size control of Si nanograins with stable photoluminescence

Wei Yu; Huijing Du; She Qiang Li; Guangsheng Fu

doi:10.1117/12.444937

19 October 2001 Efficient passivation and size control of Si nanograins with stable photoluminescence

Wei Yu, Huijing Du, She Qiang Li, Guangsheng Fu

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444937
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

The Si-rich a-SiN_x films are synthesized by pulsed laser ablation of silicon target under NH₃ atmosphere. By using laser-induced crystallization technique, the fabrication of nc-Si embedded in the SiN_x is also realized. The crystallinity and microstructure of the films after laser annealing are characterized by scanning electron microscopy and micro-Raman spectroscopy. Additionally, in order to investigate the role of the SiN_x on protecting the nc-Si from the oxidation in the air, the energy diffraction X-ray spectrum is also carried out. By photoluminescence (PL) spectrum measurement, the PL peak blue shifting is observed at room temperature. The results suggest that nc-Si embedded in the silicon nitride could be effectively passivated and stable PL of nasnosilicon grains could be obtained.

Citation Download Citation

Wei Yu, Huijing Du, She Qiang Li, and Guangsheng Fu "Efficient passivation and size control of Si nanograins with stable photoluminescence", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444937

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