19 October 2001 Epitaxial lateral overgrowth of GaN by HVPE and MOVPE
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444965
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
Epitaxial lateral overgrowth (ELO) of GaN on SiO2 masked (0001) GaN substrate has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy and metalorganic vapor phase epitaxy with diethylgallium chloride as the Ga source. It has been found that both the lateral and vertical growth rate, and geometric morphology of lateral overgrown GaN prisms are dependent on growth conditions (growth temperature and V/III ratio) and orientations. A high growth temperature and low V/III ratio is helpful to increase the lateral growth rate and flatten the top c-plane of GaN prisms. High quality coalesced flat-top ELO GaN has been fabricated by HVPE and no void is observable at the coalescence interface.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rong Zhang, Rong Zhang, Shulin Gu, Shulin Gu, Dianqing Lu, Dianqing Lu, Bo Shen, Bo Shen, Yi Shi, Yi Shi, Ling Zhang, Ling Zhang, Thomas F. Kuech, Thomas F. Kuech, Marek P. Boleslawski, Marek P. Boleslawski, T. S. Kuan, T. S. Kuan, Youdou Zheng, Youdou Zheng, } "Epitaxial lateral overgrowth of GaN by HVPE and MOVPE", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444965; https://doi.org/10.1117/12.444965
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