19 October 2001 High-power 940-nm laser arrays with nonabsorbing facets
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444929
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
In this paper, through the analysis and in consideration of the facts which influence on the ultimate output power of semiconductor laser. we report a novel 940nm semiconductor laser array structure with nonabsorbing facets to avoid the COMD on facets. The 940nm laser wafers are grown by MBE. The lasers were cleaved into cm bars. We have made a new design variant of laser array with nonabsorbing facets and coated high-and low-reflectivity coating (approx.95% and 5%). The emission wavelength of the laser arrays is 939nm. Continuous wave (CW) output power of 15 W has been achieved.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Qu, Yi Qu, Baoxue Bo, Baoxue Bo, Xin Gao, Xin Gao, Xingde Zhang, Xingde Zhang, Jiawei Shi, Jiawei Shi, } "High-power 940-nm laser arrays with nonabsorbing facets", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444929; https://doi.org/10.1117/12.444929
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