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19 October 2001 High-power 980-nm semiconductor lasers by MBE
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001)
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Within the last few years, high power laser diodes with remarkable improvements concerning output power, efficiency, and reliability have been investigated in the wavelength range between 780 nm and 1064 nm. A lot of the work has been focused on 980 nm, the pump wavelength of Erbium Doped Fiber Amplifiers (EDFAs). Pumping of EDFAs requires highest performance diode lasers due to extreme demands in reliability and beam quality. Up to now, the only type of diode laser used in this application is a single-stripe or ridge-laser which emits in a diffraction-limited optical mode and can therefore be coupled into a single-mode fiber with high efficiency. The small stripe-width limits the reliable output power of these devices to about 300 mW resulting in a fiber coupled output power of less than 250 mW. In the following we report on high-power 980 nm diode lasers comprising ridge and tapered sections for near diffraction limited output power in the watt regime. The devices are based on MBE grown layer structures in the AlInGaAs material system. They allow for more than 500 mW of optical power coupled into a single mode fiber. First reliability tests show extrapolated lifetimes of more than 7.500 h at an output power of 1.8 W.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Mikulla, Marc T. Kelemen, Martin Walther, Rudolf Kiefer, R. Moritz, and Guenter Weimann "High-power 980-nm semiconductor lasers by MBE", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001);


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