High-power InGaAs/AlGaAs/GaAs 45-degree folded cavity surface-emitting lasers

Mei Li; Baoshun Zhang; Hui Li; Baoxue Bo

doi:10.1117/12.444930

19 October 2001 High-power InGaAs/AlGaAs/GaAs 45-degree folded cavity surface-emitting lasers

Mei Li, Baoshun Zhang, Hui Li, Baoxue Bo

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444930
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

In this paper, we report on structure design of high-power InGaAs/AlGaAs/GaAs fold cavity surface-emitting laser (FCSEL) with 45 degree(s) intracavity micro-mirror. The epitaxial material for these devices was grown by molecular beam epitaxy (MBE) technique. Optical and structural characteristic of the film was studied by photoluminescence (PL), X-ray double crystal diffraction and electrochemical C-V profiling method. The radition wave length 0.921um of sample is obtained at low temperature (10K) PL spectrum. The results of X-ray double crystal rocking curve and low temperature (10K) PL experimental show the structure design of folded cavity surface-emitting lasers is realized By MBE.

Citation Download Citation

Mei Li, Baoshun Zhang, Hui Li, and Baoxue Bo "High-power InGaAs/AlGaAs/GaAs 45-degree folded cavity surface-emitting lasers", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444930

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