19 October 2001 III-V-semiconductor-based surface-micromachined catilevers for micro-opto-mechanical systems
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444972
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Surface micromachining processes based on III-V compound semiconductors are presented in this paper, in order to develop Micro-Opto-Electro-Mechanical systems (MOEMS). By fabricating micro cantilevers composed of seven InP/Air gap pairs, the major techniques of the surface micromachining are studied, including non-selective and selective etching, rinsing and drying. A severe problem of the sticking phenomena during rinsing and drying is avoided by the implementation of the Critical Point Drying (CPD) method.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin Mao, Jin Mao, Hua Tong, Hua Tong, Dan Zhou, Dan Zhou, Zhensheng Jia, Zhensheng Jia, Jianhua Wang, Jianhua Wang, Shizhong Xie, Shizhong Xie, } "III-V-semiconductor-based surface-micromachined catilevers for micro-opto-mechanical systems", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444972; https://doi.org/10.1117/12.444972

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