19 October 2001 Important aspects of volume NLO crystal growth for opto-electronic devices
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444976
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
Some aspects of growth of volume nonlinear-optical KTP and BBO single crystals, specific features of formation of their real structure and its characteristics have been studied. They can be governed by such phenomena as formation and restructuring of adsorption layers at the interface of crystal growth, their possible directing and screening effect on solution-melt clusters, mechanism of formation of the polarity of crystal structure, etc. The most important factor is the tendency to form antipolar structures of these crystals, caused by internal energy reasons. It is shown that for developing efficient technological processes for production of this type of crystals, in addition to the above factors, real processes of temperature-time changes in structure and properties of complex solution-melt crystallization media must be also taken into account.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eugene G. Tsvetkov, Victor I. Tyurikov, Vladimir N. Semenenko, "Important aspects of volume NLO crystal growth for opto-electronic devices", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444976; https://doi.org/10.1117/12.444976
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