19 October 2001 Investigation on two-color detection using asymmetric InGaAs/GaAs/AlGaAs multiquantum wells with superlattice barriers
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444968
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
The two-color detection using the multiple quantum well infrared photodetector consisting of InGaAs/GaAs step quantum wells with AlGaAs/GaAs superlattice barriers is investigated. The bound-to-bound and bound-to-continuum transitions in the step quantum wells provide two responses with energy separation large enough for the dual-band detection in the mid- and long-wave infrared ranges. The photocurrent due to the bound-to-bound transition can be extracted with a low external electric field via the miniband in the superlattice barriers so that the high leakage current is avoided. The Stark's shifts caused by the coupling and separation of energy states were clearly observed and the relevant analysis is discussed. This work demonstrates the use of asymmetric quantum wells with superlattice barriers for the fabrication of multicolor infrared detectors.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ting Mei, Ting Mei, Gamani Karunasiri, Gamani Karunasiri, } "Investigation on two-color detection using asymmetric InGaAs/GaAs/AlGaAs multiquantum wells with superlattice barriers", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444968; https://doi.org/10.1117/12.444968
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