19 October 2001 Nonlinearity effects of lateral density diffusion coefficient on gain-guided VCSEL performance
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444931
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
Electron and hole diffusions in the plane of semiconductor quantum wells play an important part in the static and dynamic operations of semiconductor lasers. In this paper, we apply a hydrodynamic model developed from the semiconductor Bloch equations to numerically study the effects of nonlinearity in the diffusion coefficient on single mode operation and direct modulation of a gain-guided InGaAs/GaAs multiple quantum well laser, operating not too far from threshold. We found that a small diffusion coefficient is advantageous for lowering the threshold current and increasing the modulation bandwidth. Most importantly, the effects of nonlinearity in the coefficient can be approximately reproduced by replacing the coefficient with an effective constant diffusion coefficient, which corresponds roughly to the half height density of the density distribution. This conclusion is the same as in Ref. 8, but we will discuss the disagreements in reaching it. Finally, the beam profile is slightly modified in the nonlinear case.
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Jianzhong Li, Samson H. Cheung, Cun-Zheng Ning, "Nonlinearity effects of lateral density diffusion coefficient on gain-guided VCSEL performance", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444931; https://doi.org/10.1117/12.444931
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