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19 October 2001 Novel high-sensitivity CE-PTHPT for optical fiber communication
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001)
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8μ+m reached 1260 and 8108. The input noise current calculated is 5.46*10^-16 A/Hz^1/2. For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174μ+w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3μ+w at the wavelength of 1.55μ+m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guohui Li, Ru Yang, Dejun Han, Chengzhou Ji, Shucheng Du, Eenjun Zhu, YiPing Zeng, and Junming Zhou "Novel high-sensitivity CE-PTHPT for optical fiber communication", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001);

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