19 October 2001 Photoluminesence and structure character on AlGaAs/GaAs quantum well laser material
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444926
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
In this paper ,high quality AlGaAs/GaAs single quantum well(SQM) structure is grown on (100) GaAs substrate by molecular beam epitaxy (MBE) system. Optical and structural characteristic of the film was studied by low temperature (10K) photoluminescence (PL) and X-ray double crystal diffraction method. Using X-ray kinematical theory, we calculated the structure parameters of each samples, the reason for the appearance of the interfering fringes and splitting peaks in double crystal rocking curve were analyse theoretically. The deep levels which affect character of the material and laser are also discussed. The experimental results show that measuring methods of the photoluminescence and X-ray double crystal diffraction are very important for testing the quality of quantum wells and improving the MBE technology.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mei Li, Mei Li, Xiaowei Song, Xiaowei Song, Yuxia Wang, Yuxia Wang, Hui Li, Hui Li, Baoxue Bo, Baoxue Bo, } "Photoluminesence and structure character on AlGaAs/GaAs quantum well laser material", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444926; https://doi.org/10.1117/12.444926
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