19 October 2001 Recent progress of 10Gb/s laser diodes for metropolitan area networks
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444942
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
We have proved that short cavity length and large optical feedback structure can improve the relaxation oscillation frequency (fr) of 1.3mm directly modulated LDs for 10Gb/s operation. By this improvement, 1.3mm InGaAsP l/4 phase shifted distributed-feedback LDs (l/4 DFB-LDs) and 1.3mm AlGaInAs Fabry-Perot (FP)-LDs successfully revealed excellent transmission with small power penalty of 0.6dB at 70 oC for +40ps/nm wavelength dispersion and 1.5dB at 85oC for +10ps/nm one, respectively. It has been also proved that 1.55mm electro-absorption modulator integrated with DFB-LDs (EAM DFB-LDs) with MQW absorption layers are more suitable for 100km transmission than those with bulk ones, which originates from the difference of extinction curves. Transmission characteristics using 100km SMF of 1.55mm EAM DFB-LD with an MQW absorption layer has been realized with power penalty of 1.3dB. These devices can cover all optical lines of various distances in metropolitan area networks.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshitaka Aoyagi, Toshitaka Aoyagi, Tadashi Nishimura, Tadashi Nishimura, Etsuji Omura, Etsuji Omura, "Recent progress of 10Gb/s laser diodes for metropolitan area networks", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444942; https://doi.org/10.1117/12.444942


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