Room-temperature luminescence at 1.54 um and other wavelengths from Er-doped Si-rich Si oxide

Guogang Qin; Guangzhao Ran; Yuan Chen; Borui Zhang; Yongping Qiao; Jishi Fu

doi:10.1117/12.444970

19 October 2001 Room-temperature luminescence at 1.54 μm and other wavelengths from Er-doped Si-rich Si oxide

Guogang Qin, Guangzhao Ran, Yuan Chen, Borui Zhang, Yongping Qiao, Jishi Fu

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444970
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

SiO₂:Si:Er films were deposited on n⁺-Si substrate using the magnetron sputtering technique, and then Au/ SiO₂: Si:Er /n⁺-Si diodes were fabricated. Both Er³⁺ photoluminescence (PL) from the SiO₂: Si: Er/n⁺-Si and electroluminescence (EL) from the Au/SiO₂: Si: Er /n⁺-Si diodes were studied. The 1.54 micrometers PL intensity ratio of SiO₂: Si: Er/n⁺-Si to that of the SiO₂: Er/n⁺-Si measured under identical conditions can be as large as ~30. While the 1.54 micrometers EL intensity ratio of an Au/ SiO₂:Si:Er/n⁺-Si diode to that of an Au/SiO₂:Er/n⁺-Si diode measured under identical conditions can be as large as 6. We also deposited nanoscale (SiO₂:Er/Si(1.0~4.0nm)/SiO₂:Er) sandwich structure, in which the silicon layer between the two SiO₂:Er barriers was 1.0~4.0 nm thick with an interval of 0.2 nm, on both n⁺-Si and p-Si substrates. Each EL spectrum of the Au/nanoscale (SiO₂:Er/Si/SiO₂:Er)/n⁺-Si diodes can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 micrometers ), 0.806 eV (1.54 micrometers ) and 0.860 eV (1.44 micrometers ), and full widths at half maximum of 0.052, 0.045 and 0.055 eV, respectively. Among the Au/nanoscale (SiO₂:Er/Si/SiO2:Er)/n⁺-Si diodes with the Si layers having various thicknesses, the EL intensities of the 1.64, 1.54 and 1.44 micrometers bands of the diode with a 1.6 nm Si layer attain maxima which are 22, 8 and 7 times larger than those of the control diode without any Si layer (Au/nanoscale SiO₂:Er/n⁺-Si), respectively.

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Guogang Qin, Guangzhao Ran, Yuan Chen, Borui Zhang, Yongping Qiao, and Jishi Fu "Room-temperature luminescence at 1.54 μm and other wavelengths from Er-doped Si-rich Si oxide", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444970

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KEYWORDS

Silicon

Electroluminescence

Erbium

Diodes

Gold

Luminescence

Semiconductor lasers

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