Paper
19 October 2001 Selective intermixing of Ga(In)NAs/GaAs quantum well structures using SiO2 encapsulation and rapid thermal annealing
Yinqiang Xu, Lianhe Li, Zhong Pan, Yaowang Lin, Qiming Wang
Author Affiliations +
Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444956
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
The quantum well intermixing of Ga(In)NAs/GaAs simple quantum well (SQW) using SiO2 encapsulation and rapid thermal annealing has been studied. Obvious enhanced intermixing of GaInNAs/GaAs SQW was observed due to the localized SiO2 capping layer and RTA at temperature between 650íµ and 900íµ. The selective intermixing strongly depends on N composition and In composition. An obvious selective intermixing had been found in the samples with small N composition and/or high In composition.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yinqiang Xu, Lianhe Li, Zhong Pan, Yaowang Lin, and Qiming Wang "Selective intermixing of Ga(In)NAs/GaAs quantum well structures using SiO2 encapsulation and rapid thermal annealing", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444956
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KEYWORDS
Annealing

Quantum wells

Diffusion

Gallium arsenide

Lithium

Silica

Optoelectronics

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